PRODUCTS
Optical Communication Applicat
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Active Component Manufacturing
- Optical LD & PD Wafer
- Aspherical Lens and Cap
- TEC Device
- 2.5G-10G APD CHIP
- 10G PIN PD CHIP
- Transimpedance Amplifier
- Aluminum Nitride Substrates
- Alumina substrates
- High Temperature Co-fired Substrates (HTCC)
- 10G CWDM DFB Chip
- Microlens Array
- Smile Corrector
- Slow Axis Collimators（SAC）
- Fast Axis Collimators Arrays（FACA）
- MEMS Mirror
- SOI Wafers
- Super-thick Thermal Oxidized Wafers
- 25G DFB Laser Diode Chip
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Test and Measurement
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High Speed Qptical Transceiver
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Optical Transport Network Devi
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Network, Security and Delivery
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Optical Automation Equipments
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Passive Component Manufacturin
Industrial Laser and Optical A
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Lasers
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Laser Drivers
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Controller Electronics
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Optical Components
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Materials
Solutions
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BOSA Manufacturing and Packagi
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ECDL Stable Laser Solution
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Laser Spectroscopy Solution
Single Mode Laser Diodes
Fabry Perot Laser Diodes operate on a single transverse resonator mode leading to an output which is diffraction limited. However, multiple axial (longitudinal) modes may occur which can lead to differing optical frequencies. The frequencies are separated by the free spectral range of the resonator given by the reflecting facets of the laser chip.
| Part number | Wavelength/nm | Output Power/mw | Package Style |
| EYP-RWL-0790-00100-1500-SOT02-0000 | 790 | 100 | SOT 9 x 3.65 mm |
| EYP-RWL-0808-00800-4000-BFW02-0010 | 808 | 800 | Butterfly with window |
| EYP-RWL-0808-00800-4000-CMT04-0000 | 808 | 800 | C-Mount 4 mm |
| EYP-RWL-0840-00100-0750-TOS01-0000 | 840 | 100 | TO 56 x 1.27 mm |
| EYP-RWL-0850-00100-1500-SOT12-0000 | 850 | 100 | SOT 9 x 3.65 mm |
| EYP-RWL-0870-00100-1500-SOT02-0000 | 870 | 100 | SOT 9 x 3.65 mm |
| EYP-RWL-1060-00100-0750-SOT01-0000 | 1060 | 100 | SOT 9 x 2.45 mm |
| EYP-RWL-1080-00080-0750-SOT01-0000 | 1080 | 80 | SOT 9 x 2.45 mm |
| EYP-RWL-1120-00050-1300-SOT02-0000 | 1120 | 50 | SOT 9 x 3.65 mm |
Supplier
Eagleyard Photonics industry-experienced management team has the skills necessary to turn advanced technology into mature products in compliance with the expectations of industrial customers. Based on GaAs wafer material our semiconductor laser diodes cover wavelengths ranging from 630 to 1.120 nm. If you need high power and superior brightness - and all that in a single emitter configuration - you will find us at the leading edge of technology.
